Quasiparticle-pair interference effect in proximity-coupled junction ladders
نویسندگان
چکیده
منابع مشابه
Proximity effect in planar Superconductor/Semiconductor junction
We have measured the very low temperature (down to 30mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300mK, the resistance shows a maximum and decreases at lower...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1995
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.52.15095